Photoluminescence enhancement and high gain amplification of ErxY2−xSiO5 waveguide

Er x Y 2 − x SiO 5  (x=0–2) films have been fabricated on Si(100) substrates by the sol-gel method. Enhanced Er3+ photoluminescence of around 30 times for the ErxY2−xSiO5 (x=0.1) film was observed compared with pure Er2SiO5 film at the wavelength pump of 654 nm. Reduced upconversion effect and decre...

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Bibliographic Details
Published in:Journal of applied physics 2010-07, Vol.108 (1)
Main Authors: Wang, X. J., Yuan, G., Isshiki, H., Kimura, T., Zhou, Z.
Format: Article
Language:English
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Summary:Er x Y 2 − x SiO 5  (x=0–2) films have been fabricated on Si(100) substrates by the sol-gel method. Enhanced Er3+ photoluminescence of around 30 times for the ErxY2−xSiO5 (x=0.1) film was observed compared with pure Er2SiO5 film at the wavelength pump of 654 nm. Reduced upconversion effect and decreased nonradiative transient rate are two main reasons for the enhanced Er3+ luminescence in the new film of ErxY2−xSiO5. Above 10 dB optical gain can be achieved at the 1 mm length ErxY2−xSiO5 (x=0.1) waveguide under 30 mW pumping power, indicating it is sought candidate material for compact waveguide amplifiers and emitters in silicon photonics integration.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3446822