Fe diffusion in polycrystalline Cu(In,Ga)Se2 layers for thin-film solar cells

Diffusion of Fe in solar-grade Cu(In,Ga)Se2 (CIGSe) layers was investigated over the temperature range from 200 to 600 °C. Either natural or radioactive iron was diffused from the front-surface of CIGSe/Mo/soda lime glass samples. Penetration profiles of stable F56e and radioactive F59e were measure...

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Bibliographic Details
Published in:Applied physics letters 2010-06, Vol.96 (24)
Main Authors: Stolwijk, N. A., Obeidi, Sh, Bastek, J., Wuerz, R., Eicke, A.
Format: Article
Language:English
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Summary:Diffusion of Fe in solar-grade Cu(In,Ga)Se2 (CIGSe) layers was investigated over the temperature range from 200 to 600 °C. Either natural or radioactive iron was diffused from the front-surface of CIGSe/Mo/soda lime glass samples. Penetration profiles of stable F56e and radioactive F59e were measured by secondary ion mass spectrometry (SIMS) and ion-beam sputtering in conjunction with activity counting, respectively. The Fe diffusivity can be described by the Arrhenius equation D=1.6×10−4 exp(−0.97 eV/kBT) cm2 s−1. Taking into account Fe solubility data obtained from the SIMS profiles, we provide evidence that D is representative of diffusion along grain boundaries.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3449125