Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy

We investigate δ-doped GaAs samples grown by molecular-beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic sub-ban...

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Bibliographic Details
Published in:Journal of applied physics 1990-05, Vol.67 (9), p.4149-4151
Main Authors: BERNUSSI, A. A, IIKAWA, F, MOTISUKE, P, BASMAJI, P, SIU LI, M, HIPOLITO, O
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:We investigate δ-doped GaAs samples grown by molecular-beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic sub-bands in the δ-doped potential well that take into account the diffusion of the dopants.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.344976