Transport properties of liquid-phase epitaxial Hg1− x Cd x Te n / p structures

We report Hall-effect results of controlled Hg-diffused n regions on as-grown, p-type liquid-phase epitaxial Hg0.8Cd0.2Te, for varying diffusion times. The Hall-effect results of Hg diffusion through CdTe passivation layers of varying thickness for fixed time on as-grown p-type Hg0.8Cd0.2Te are also...

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Bibliographic Details
Published in:Journal of applied physics 1990-06, Vol.67 (11), p.6886-6898
Main Authors: Koppel, P., Owens, K.
Format: Article
Language:English
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Summary:We report Hall-effect results of controlled Hg-diffused n regions on as-grown, p-type liquid-phase epitaxial Hg0.8Cd0.2Te, for varying diffusion times. The Hall-effect results of Hg diffusion through CdTe passivation layers of varying thickness for fixed time on as-grown p-type Hg0.8Cd0.2Te are also reported. From additional measurements of the electrical properties for the n- and p-type cases, the Hall data are analyzed in terms of the two-layer model [R. L. Petritz, Phys. Rev. 110, 1254 (1958)]. From this analysis, junction depth is estimated for a variety of experimental diffusion conditions using a fitting procedure in conjuction with a theoretical transport model. The fitting procedure results are verified by differential Hall measurements and also compared to diffusion theory [R. B. Allen, H. Bernstein, and A. D. Kurtz, J. Appl. Phys. 31, 334 (1960)]. The sensitivity of determining junction depth to errors in estimates of the donor and acceptor concentration, and mobility within each layer, are discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.345080