Range distributions of ion-implanted fluorine in Hg1− x Cd x Te, CdTe, and Pb1− x Sn x Te

• Published in: Journal of applied physics 1990-04, Vol.67 (7), p.3269-3274
• Main Authors: Xia, Yueyuan, Tan, Chunyu, Hu, Xierong, Yang, Hong, Sun, Xiufang, Zheng, Zongshuang, Zhu, Peiran, Liu, Jiarui
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.345361

Depth profiles of ion-implanted fluorine in Hg1−xCdxTe, CdTe, and Pb1−xSnxTe have been measured by use of the 19F(p,αγ)16O resonance nuclear reaction at 872.1 keV with width Γ=4.2 keV. In order to obtain the true range distribution of implanted fluorine from the experimental excitation yield curve, a convolution calculation method is presented, from which the range distribution parameters such as the average projected range RP, the projected range straggling ΔRP and the skewness of the projected range distribution SK were obtained. These experimental range parameters were compared with those obtained by a theoretical calculation and by use of the trim89 program, and shows that for all the materials studied here the experimental RP values agree with the theoretical and the trim values very well but the experimental range straggling ΔRP are larger than those obtained by the theoretical calculation and the trim89. This phenomenon may be attributed to the enhanced diffusion during the ion implantation.