Electric field dependence of the eigenstates of coupled quantum wells

We calculate the effects of the coupling between the eigenstates of two symmetric GaAs/ Alx Ga1−x As quantum wells separated by a thin barrier with an applied electric field using a very accurate numerical method that we have developed. Energy shifts with field and overlap integrals for the symmetri...

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Bibliographic Details
Published in:Journal of applied physics 1990-02, Vol.67 (3), p.1421-1424
Main Author: BLOSS, W. L
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Summary:We calculate the effects of the coupling between the eigenstates of two symmetric GaAs/ Alx Ga1−x As quantum wells separated by a thin barrier with an applied electric field using a very accurate numerical method that we have developed. Energy shifts with field and overlap integrals for the symmetric and antisymmetric electron and hole eigenstates are calculated. These results are compared to a single quantum well of equivalent dimensions. As suggested in the literature, the quantum-confined Stark effect is shown to be significantly increased by the use of coupled quantum wells. Comparison with the experimental results of Chen et al. [Y. J. Chen, E. S. Koteles, B. S. Elman, and C. A. Armiento, Phys. Rev. B 36, 4562 (1987)] is made with surprisingly good agreement.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.345672