Nonvolatile memories by using charge traps in silicon-rich oxides

The nonvolatile memory characteristics of silicon-rich oxide (SRO, SiO x ) grown at room temperature for charge-trapping layer are first reported and shown to exhibit a strong dependence on oxygen content (x). The memory window that is estimated by capacitance-voltage curves monotonically decreases...

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Bibliographic Details
Published in:Journal of applied physics 2010-08, Vol.108 (3), p.033708-033708-4
Main Authors: Lim, Keun Yong, Kim, Min Choul, Hong, Seung Hui, Choi, Suk-Ho, Kim, Kyung Joong
Format: Article
Language:English
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Summary:The nonvolatile memory characteristics of silicon-rich oxide (SRO, SiO x ) grown at room temperature for charge-trapping layer are first reported and shown to exhibit a strong dependence on oxygen content (x). The memory window that is estimated by capacitance-voltage curves monotonically decreases with increasing x from 1.0 to 1.8, possibly resulting from the x-dependent variation in the Si suboxide states responsible for the charge traps, as evidenced by x-ray photoelectron spectroscopy. The density of the charge traps is estimated to be ( 3.9 - 8.8 ) × 10 12   cm − 2 for x = 1.0 - 1.4 . The charge-loss rate sharply decreases at x = 1.2 , but by further increase in x above 1.2, it gradually increases, which can be explained by the lowered SRO / SiO 2 barrier due to the increased optical band gap of SRO at larger x
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3460742