Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs wh...

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Bibliographic Details
Published in:Applied physics letters 2010-07, Vol.97 (2), p.021902-021902-3
Main Authors: Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Korpijärvi, V.-M., Pakarinen, J., Puustinen, J., Laukkanen, P., Laakso, A., Guina, M., Dumitrescu, M., Pessa, M.
Format: Article
Language:English
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Summary:Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs whereas they are clearly observed for un-doped QWs. The two observations indicate a Be-related shift in the Fermi level above the hole levels in the QW region, i.e., the change in band bending in this system. The results point out that the experimentally-observed enhancement in QW photoluminescence upon Be-doping is associated with a better collection/confinement of photogenerated carriers by the Be-doped GaInNAs QW.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3462299