Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs wh...

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Published in:Applied physics letters 2010-07, Vol.97 (2), p.021902-021902-3
Main Authors: Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Korpijärvi, V.-M., Pakarinen, J., Puustinen, J., Laukkanen, P., Laakso, A., Guina, M., Dumitrescu, M., Pessa, M.
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cited_by cdi_FETCH-LOGICAL-c284t-80c67ac8d5af096315f95723a8f7bc45644c77652a6dc288dd8a1a967e4ff6833
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container_end_page 021902-3
container_issue 2
container_start_page 021902
container_title Applied physics letters
container_volume 97
creator Kudrawiec, R.
Gladysiewicz, M.
Misiewicz, J.
Korpijärvi, V.-M.
Pakarinen, J.
Puustinen, J.
Laukkanen, P.
Laakso, A.
Guina, M.
Dumitrescu, M.
Pessa, M.
description Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs whereas they are clearly observed for un-doped QWs. The two observations indicate a Be-related shift in the Fermi level above the hole levels in the QW region, i.e., the change in band bending in this system. The results point out that the experimentally-observed enhancement in QW photoluminescence upon Be-doping is associated with a better collection/confinement of photogenerated carriers by the Be-doped GaInNAs QW.
doi_str_mv 10.1063/1.3462299
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title Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement
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