Demonstration of homojunction ZnTe solar cells

We report on the proof of photovoltaic activity of homojunction ZnTe solar cells in which n-ZnTe layers are fabricated by thermal diffusion of Al into p-ZnTe at several diffusion times to control the junction depth. An open circuit voltage of approximately 0.9 V was obtained under 1× sun AM1.5G cond...

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Bibliographic Details
Published in:Journal of applied physics 2010-07, Vol.108 (2), p.024502-024502-3
Main Authors: Tanaka, Tooru, Yu, Kin M., Stone, Peter R., Beeman, Jeffrey W., Dubon, Oscar D., Reichertz, Lothar A., Kao, Vincent M., Nishio, Mitsuhiro, Walukiewicz, Wladek
Format: Article
Language:English
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Summary:We report on the proof of photovoltaic activity of homojunction ZnTe solar cells in which n-ZnTe layers are fabricated by thermal diffusion of Al into p-ZnTe at several diffusion times to control the junction depth. An open circuit voltage of approximately 0.9 V was obtained under 1× sun AM1.5G condition in all solar cells, independent of diffusion times, while a short circuit current dropped down with increasing the diffusion time due to an increased light absorption in heavily defective Al-diffused layer. These fundamental results provide a basis for future development of intermediate band solar cells based on ZnTe materials.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3463421