Charge carrier separation induced by intrinsic surface strain in pristine ZnO nanowires

We predict by first-principles calculations a spontaneous charge carrier separation mechanism in pristine [0001]-oriented ZnO nanowires. We find that the shrinking strain induced by surface reconstruction causes electrons and holes to separate and move toward the core and surface region, respectivel...

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Published in:Applied physics letters 2010-08, Vol.97 (5), p.053104-053104-3
Main Authors: Kou, Liangzhi, Li, Chun, Zhang, Zi-Yue, Chen, Changfeng, Guo, Wanlin
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cited_by cdi_FETCH-LOGICAL-c319t-385a6fc7a0ac33f7747d90e17e0a573f5fa7c0fa1d1493527eac99f62f256d693
cites cdi_FETCH-LOGICAL-c319t-385a6fc7a0ac33f7747d90e17e0a573f5fa7c0fa1d1493527eac99f62f256d693
container_end_page 053104-3
container_issue 5
container_start_page 053104
container_title Applied physics letters
container_volume 97
creator Kou, Liangzhi
Li, Chun
Zhang, Zi-Yue
Chen, Changfeng
Guo, Wanlin
description We predict by first-principles calculations a spontaneous charge carrier separation mechanism in pristine [0001]-oriented ZnO nanowires. We find that the shrinking strain induced by surface reconstruction causes electrons and holes to separate and move toward the core and surface region, respectively. Such separation can be enhanced by axially applied tensile strain as a result of the enhancement of surface strain induced by the Poisson effect, and be suppressed by compressive axial strain. Similar carrier separations are found in IIB-sulfides. This intrinsic charge separation and tensile strain induced enhancement are expected to shed light on solar cell designs.
doi_str_mv 10.1063/1.3467262
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fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3467262</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-385a6fc7a0ac33f7747d90e17e0a573f5fa7c0fa1d1493527eac99f62f256d693</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWKsH_0GuHrYmO5ukuQhS_IJCL4rgJYzZRCOaLZMt0n_vtt2rp5mBh-F9H8YupZhJoeFazqDRptb1EZtIYUwFUs6P2UQIAZW2Sp6ys1K-hlPVABP2uvhE-gjcI1EKxEtYI2GfusxTbjc-tPx9O6w9pVyS52VDEX3gpSdMO4avKZU-5cDf8opnzN1volDO2UnE7xIuxjllL_d3z4vHarl6eFrcLisP0vYVzBXq6A0K9ADRmMa0VgRpgkBlIKqIxouIspWNBVWbgN7aqOtYK91qC1N2dfjrqSuFQnRDnh-krZPC7Yw46UYjA3tzYItP_b7j__BBixu1uL0W-APCb2mP</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Charge carrier separation induced by intrinsic surface strain in pristine ZnO nanowires</title><source>American Institute of Physics (AIP) Publications</source><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Kou, Liangzhi ; Li, Chun ; Zhang, Zi-Yue ; Chen, Changfeng ; Guo, Wanlin</creator><creatorcontrib>Kou, Liangzhi ; Li, Chun ; Zhang, Zi-Yue ; Chen, Changfeng ; Guo, Wanlin</creatorcontrib><description>We predict by first-principles calculations a spontaneous charge carrier separation mechanism in pristine [0001]-oriented ZnO nanowires. We find that the shrinking strain induced by surface reconstruction causes electrons and holes to separate and move toward the core and surface region, respectively. Such separation can be enhanced by axially applied tensile strain as a result of the enhancement of surface strain induced by the Poisson effect, and be suppressed by compressive axial strain. Similar carrier separations are found in IIB-sulfides. This intrinsic charge separation and tensile strain induced enhancement are expected to shed light on solar cell designs.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3467262</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-08, Vol.97 (5), p.053104-053104-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-385a6fc7a0ac33f7747d90e17e0a573f5fa7c0fa1d1493527eac99f62f256d693</citedby><cites>FETCH-LOGICAL-c319t-385a6fc7a0ac33f7747d90e17e0a573f5fa7c0fa1d1493527eac99f62f256d693</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3467262$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,777,779,781,792,27905,27906,76132</link.rule.ids></links><search><creatorcontrib>Kou, Liangzhi</creatorcontrib><creatorcontrib>Li, Chun</creatorcontrib><creatorcontrib>Zhang, Zi-Yue</creatorcontrib><creatorcontrib>Chen, Changfeng</creatorcontrib><creatorcontrib>Guo, Wanlin</creatorcontrib><title>Charge carrier separation induced by intrinsic surface strain in pristine ZnO nanowires</title><title>Applied physics letters</title><description>We predict by first-principles calculations a spontaneous charge carrier separation mechanism in pristine [0001]-oriented ZnO nanowires. We find that the shrinking strain induced by surface reconstruction causes electrons and holes to separate and move toward the core and surface region, respectively. Such separation can be enhanced by axially applied tensile strain as a result of the enhancement of surface strain induced by the Poisson effect, and be suppressed by compressive axial strain. Similar carrier separations are found in IIB-sulfides. This intrinsic charge separation and tensile strain induced enhancement are expected to shed light on solar cell designs.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKsH_0GuHrYmO5ukuQhS_IJCL4rgJYzZRCOaLZMt0n_vtt2rp5mBh-F9H8YupZhJoeFazqDRptb1EZtIYUwFUs6P2UQIAZW2Sp6ys1K-hlPVABP2uvhE-gjcI1EKxEtYI2GfusxTbjc-tPx9O6w9pVyS52VDEX3gpSdMO4avKZU-5cDf8opnzN1volDO2UnE7xIuxjllL_d3z4vHarl6eFrcLisP0vYVzBXq6A0K9ADRmMa0VgRpgkBlIKqIxouIspWNBVWbgN7aqOtYK91qC1N2dfjrqSuFQnRDnh-krZPC7Yw46UYjA3tzYItP_b7j__BBixu1uL0W-APCb2mP</recordid><startdate>20100802</startdate><enddate>20100802</enddate><creator>Kou, Liangzhi</creator><creator>Li, Chun</creator><creator>Zhang, Zi-Yue</creator><creator>Chen, Changfeng</creator><creator>Guo, Wanlin</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100802</creationdate><title>Charge carrier separation induced by intrinsic surface strain in pristine ZnO nanowires</title><author>Kou, Liangzhi ; Li, Chun ; Zhang, Zi-Yue ; Chen, Changfeng ; Guo, Wanlin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-385a6fc7a0ac33f7747d90e17e0a573f5fa7c0fa1d1493527eac99f62f256d693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kou, Liangzhi</creatorcontrib><creatorcontrib>Li, Chun</creatorcontrib><creatorcontrib>Zhang, Zi-Yue</creatorcontrib><creatorcontrib>Chen, Changfeng</creatorcontrib><creatorcontrib>Guo, Wanlin</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kou, Liangzhi</au><au>Li, Chun</au><au>Zhang, Zi-Yue</au><au>Chen, Changfeng</au><au>Guo, Wanlin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charge carrier separation induced by intrinsic surface strain in pristine ZnO nanowires</atitle><jtitle>Applied physics letters</jtitle><date>2010-08-02</date><risdate>2010</risdate><volume>97</volume><issue>5</issue><spage>053104</spage><epage>053104-3</epage><pages>053104-053104-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We predict by first-principles calculations a spontaneous charge carrier separation mechanism in pristine [0001]-oriented ZnO nanowires. We find that the shrinking strain induced by surface reconstruction causes electrons and holes to separate and move toward the core and surface region, respectively. Such separation can be enhanced by axially applied tensile strain as a result of the enhancement of surface strain induced by the Poisson effect, and be suppressed by compressive axial strain. Similar carrier separations are found in IIB-sulfides. This intrinsic charge separation and tensile strain induced enhancement are expected to shed light on solar cell designs.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3467262</doi><oa>free_for_read</oa></addata></record>
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title Charge carrier separation induced by intrinsic surface strain in pristine ZnO nanowires
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T17%3A58%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Charge%20carrier%20separation%20induced%20by%20intrinsic%20surface%20strain%20in%20pristine%20ZnO%20nanowires&rft.jtitle=Applied%20physics%20letters&rft.au=Kou,%20Liangzhi&rft.date=2010-08-02&rft.volume=97&rft.issue=5&rft.spage=053104&rft.epage=053104-3&rft.pages=053104-053104-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3467262&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c319t-385a6fc7a0ac33f7747d90e17e0a573f5fa7c0fa1d1493527eac99f62f256d693%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true