Photoluminescence study of native defects in the filled tetrahedral semiconductor LiZnP

The radiative recombination related to a native defect in a direct wide-gap semiconductor LiZnP (Eg = 2.13 eV at 77 K) was studied at 77 K using photoluminescence (PL) technique. One type of crystal yields PL emission that consists of two peaks: One is a peak at 615 nm (2.02 eV) associated with a ph...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1991-06, Vol.69 (11), p.7812-7814
Main Authors: KURIYAMA, K, MINEO, N, TAKAHASHI, Y
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The radiative recombination related to a native defect in a direct wide-gap semiconductor LiZnP (Eg = 2.13 eV at 77 K) was studied at 77 K using photoluminescence (PL) technique. One type of crystal yields PL emission that consists of two peaks: One is a peak at 615 nm (2.02 eV) associated with a phosphorus vacancy (lying at 110 meV below the conduction band)-valence band transition and the other a broad peak at 848 nm (1.46 eV) associated with a phosphorus vacancy (VP)-acceptor complex. Another type of crystal exhibits only a broad emission around 830 nm. Both types of PL emissions are attributed to the difference in concentration between free VP defects and VP-acceptor complexes in as-grown crystals. The origin of the broad emissions observed in both types is likely to be essentially identical.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.347510