Passive wavelength stabilization in the 1.5-μm region of wide gain spectrum lasers by Er3+-doped materials

Er3+-doped materials, either crystals or glasses, are shown to act as passive stabilizers for wide gain spectrum lasers of the F-center NaCl: OH− type and of the InGaAsP semiconductor type. The wavelength is demonstrated to be stabilized against perturbations originating from pumping intensity and t...

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Bibliographic Details
Published in:Journal of applied physics 1991-05, Vol.69 (10), p.7310-7312
Main Authors: AUZEL, F, ZHOU, B. W, MEICHENIN, D, JEAN-LOUIS, A. M
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:Er3+-doped materials, either crystals or glasses, are shown to act as passive stabilizers for wide gain spectrum lasers of the F-center NaCl: OH− type and of the InGaAsP semiconductor type. The wavelength is demonstrated to be stabilized against perturbations originating from pumping intensity and temperature variations. A thermal stability coefficient of 0.14 Å/°C is demonstrated. In the InGaAsP laser case, single-mode operation, independent of possible extra Fabry–Perot etalon modes, is achieved, with rejection of adjacent modes by 25 dB. The possibility of active stabilization in the case of an inhomogeneous gain spectrum laser is discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.347579