The effects of a surface magnetic field on reactive ion etching

The effects of a surface magnetic field on reactive ion etching are described. The surface magnetic field is formed by the construction of a surface-multimagnetic mirror configuration (SURMAC) cage that consists of permanent magnets arranged inside the wall of a parallel plate rf discharge chamber....

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Bibliographic Details
Published in:Journal of applied physics 1991, Vol.69 (1), p.447-451
Main Authors: Han, Haewook, Whang, Ki-Woong
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Testing, measurement, noise and reliability
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Summary:The effects of a surface magnetic field on reactive ion etching are described. The surface magnetic field is formed by the construction of a surface-multimagnetic mirror configuration (SURMAC) cage that consists of permanent magnets arranged inside the wall of a parallel plate rf discharge chamber. The experimental results of ion density, electron temperature, negative self-bias of an rf-generated N2 plasma, and etching of Si and SiO2 with a CF4 plasma are obtained with and without the SURMAC cage (rf power 40–520 W, gas pressure 20–100 mTorr). The results show that a surface magnetic field increases the etch rates of Si and SiO2 at high power (>250 W) and high pressure (100 mTorr), improves the Si to SiO2 selectivity at low power (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.347682