Temperature dependence of energies and broadening parameters of near band edge interband excitonic transitions in wurtzite ZnCdMgSe

• Published in: Journal of applied physics 2010-09, Vol.108 (5), p.053502-053502-7
• Main Authors: Dumcenco, D. O., Huang, Y. S., Hsu, H. P., Tiong, K. K., Firszt, F., Strzałkowski, K., Łęgowski, S., Męczyńska, H.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.3481378

An optical characterization of two wurtzite ZnCdMgSe crystalline alloys grown by the modified high-pressure Bridgman method was carried out by temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) in the temperature range of 10-300 K and photoreflectance (PR) measurements between 300-400 K. Low temperature PL spectra of the investigated samples consisted of the excitonic line, the "edge-emission" due to radiative recombination of shallow donor-acceptor pairs and a broad band related to recombination through deep level defects. Three excitonic features, A , B , and C , in the vicinity of band edge were observed in the CER and PR spectra. The peak positions of band edge excitonic features in the PL spectra were shifted slightly toward lower energies as compared to the lowest corresponding transition energies of A exciton determined from CER and PR data. The increase in the CER-PL shift with the increasing of Mg content in the investigated crystals was explained by the rising of compositional disorder causing the smearing of the band edge energies. In addition, the parameters that describe the temperature dependence of the transition energies and broadening parameters of the band edge excitonic transitions were evaluated and discussed.