White light emission from amorphous silicon oxycarbide ( a-SiC x O y ) thin films: Role of composition and postdeposition annealing

The effects of carbon and postdeposition annealing on white luminescence are studied in amorphous silicon oxycarbide ( a-SiC x O y ) films grown by chemical vapor deposition. The films showed strong room-temperature luminescence in a broad spectral range from blue-violet to near infrared, depending...

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Bibliographic Details
Published in:Applied physics letters 2010-08, Vol.97 (8), p.081905-081905-3
Main Authors: Gallis, Spyros, Nikas, Vasileios, Suhag, Himani, Huang, Mengbing, Kaloyeros, Alain E.
Format: Article
Language:English
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Summary:The effects of carbon and postdeposition annealing on white luminescence are studied in amorphous silicon oxycarbide ( a-SiC x O y ) films grown by chemical vapor deposition. The films showed strong room-temperature luminescence in a broad spectral range from blue-violet to near infrared, depending on excitation energy. Photoluminescence (PL) intensity exhibited good correlation with Si  O  C bond concentration. At low C ( < 5 % ) , matrix PL was completely quenched after annealing in O 2 even at 500 ° C . PL was unaffected by O 2 annealing at higher C, and could be enhanced when excited by an ultraviolet laser. These findings are correlated to C- and Si-related O defect centers as luminescence sources in a-SiC x O y .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3482938