High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors

Ambipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) inverter. The ambipolar TFT exhibits a electron mobility of 23.8   cm 2 / V s and hole mobility of 0.15   cm 2 / V s for the...

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Bibliographic Details
Published in:Applied physics letters 2010-08, Vol.97 (8), p.083505-083505-3
Main Authors: Liu, Po-Tsun, Chou, Yi-Teh, Teng, Li-Feng, Fuh, Chur-Shyang
Format: Article
Language:English
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Summary:Ambipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) inverter. The ambipolar TFT exhibits a electron mobility of 23.8   cm 2 / V s and hole mobility of 0.15   cm 2 / V s for the InGaZnO and pentacene, respectively. The thermal annealing process was also studied to adjust electron concentration reducing operating voltage of the CMOS inverter. The voltage gain achieves as high as 60 obtained in the first and third quadrants of the voltage transfer characteristic. The high performance and simple manufacture of the heterostructure CMOS inverter show promise as critical components in various electrical applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3483616