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Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap ( Γ e _ hh ) and spontaneous emission rate. The analysis was carried out by using self-consistent six-band k ⋅ p band formalism. The design of acti...

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Bibliographic Details
Published in:Applied physics letters 2010-09, Vol.97 (13), p.131114-131114-3
Main Authors: Zhao, Hongping, Liu, Guangyu, Tansu, Nelson
Format: Article
Language:English
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Summary:The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap ( Γ e _ hh ) and spontaneous emission rate. The analysis was carried out by using self-consistent six-band k ⋅ p band formalism. The design of active region consisting of 30 Å In 0.25 Ga 0.75 N QW with InN delta-layer leads to large Γ e _ hh of > 50 % with emission wavelength in the yellow and red spectral regimes, which is applicable for nitride-based light-emitting diodes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3493188