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Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap ( Γ e _ hh ) and spontaneous emission rate. The analysis was carried out by using self-consistent six-band k ⋅ p band formalism. The design of acti...
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Published in: | Applied physics letters 2010-09, Vol.97 (13), p.131114-131114-3 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap
(
Γ
e
_
hh
)
and spontaneous emission rate. The analysis was carried out by using self-consistent six-band
k
⋅
p
band formalism. The design of active region consisting of 30 Å
In
0.25
Ga
0.75
N
QW with InN delta-layer leads to large
Γ
e
_
hh
of
>
50
%
with emission wavelength in the yellow and red spectral regimes, which is applicable for nitride-based light-emitting diodes. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3493188 |