0.4-3.0-MeV-range Be-ion implantations into InP:Fe

High-energy (MeV) Be implants in the energy range 0.4–3.0 MeV and dose range 2×1013–6×1014 cm−2 were performed in InP:Fe. Phosphorus coimplantation was used at all Be implant energies and doses to minimize Be redistribution during annealing. For comparison, the Be implant alone was also performed at...

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Bibliographic Details
Published in:Journal of applied physics 1991-09, Vol.70 (6), p.2973-2978
Main Authors: NADELLA, R. K, RAO, M. V, SIMONS, D. S, CHI, P. H
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:High-energy (MeV) Be implants in the energy range 0.4–3.0 MeV and dose range 2×1013–6×1014 cm−2 were performed in InP:Fe. Phosphorus coimplantation was used at all Be implant energies and doses to minimize Be redistribution during annealing. For comparison, the Be implant alone was also performed at 1 MeV for a dose of 2×1014 cm−2. The first four moments of the Be implant depth distributions were calculated from the secondary-ion-mass spectrometry (SIMS) data on the as-implanted samples. Variable temperature/time rapid thermal annealing (RTA) cycles were used to activate the Be implant. A maximum of 94% activation was obtained for 875 °C/15-s RTA on the 2-MeV/2×1014-cm−2 Be implant. In contrast to Be-implanted samples, no in-diffusion of Be was observed in Be/P-coimplanted samples. For the annealed samples, two additional Be peaks located at 0.8Rp and 0.9Rp (range) were observed in the SIMS depth profiles.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.349324