Positron beam defect profiling of silicon epitaxial layers

Epitaxial layers of silicon grown on a Si(100) substrate by molecular-beam epitaxy (MBE) and solid-phase epitaxy (SPE) have been investigated by slow positron beam analysis methods. Results of Doppler broadening measurements revealed that the S parameter of the SPE material is considerably higher th...

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Published in:Journal of applied physics 1991-09, Vol.70 (6), p.3003-3006
Main Authors: Schut, H., van Veen, A., van de Walle, G. F. A., Gorkum, A. A. van
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Language:English
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description Epitaxial layers of silicon grown on a Si(100) substrate by molecular-beam epitaxy (MBE) and solid-phase epitaxy (SPE) have been investigated by slow positron beam analysis methods. Results of Doppler broadening measurements revealed that the S parameter of the SPE material is considerably higher than the value measured for the MBE layer, indicative of a higher concentration of open-volume defects in the former material. This was confirmed by measurements of the positronium fraction at elevated temperatures.
doi_str_mv 10.1063/1.349329
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title Positron beam defect profiling of silicon epitaxial layers
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