Hydrogenated amorphous silicon nanowire transistors with Schottky barrier source/drain junctions

Hydrogenated amorphous silicon nanowire field-effect transistors (a-Si:H NWFETs) with Schottky source/drain junctions have been fabricated with a simple process involving maximum temperatures of 250 ° C . Electrical characteristics of devices with various numbers of wires and different linewidths ar...

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Bibliographic Details
Published in:Applied physics letters 2010-10, Vol.97 (14), p.143509-143509-3
Main Authors: Cantley, Kurtis D., Subramaniam, Anand, Pratiwadi, Ramapriyan R., Floresca, Herman Carlo, Wang, Jinguo, Stiegler, Harvey, Chapman, Richard A., Kim, Moon J., Vogel, Eric M.
Format: Article
Language:English
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Summary:Hydrogenated amorphous silicon nanowire field-effect transistors (a-Si:H NWFETs) with Schottky source/drain junctions have been fabricated with a simple process involving maximum temperatures of 250 ° C . Electrical characteristics of devices with various numbers of wires and different linewidths are analyzed. The NWFETs with small effective channel width demonstrate improved subthreshold slope and field-effect mobility as compared to wider devices. Additionally, the on-current scales linearly with effective channel width. Possible explanations for these effects are discussed, and applications of a-Si:H NWFETs are presented.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3499288