Hydrogen-related n -type conductivity in hydrothermally grown epitaxial ZnO films

Epitaxial ZnO films were grown on single crystal spinel substrates at 90 ° C in water. Hall measurements showed that the n -type carrier concentration and conductivity of the ZnO films decreased as postgrowth annealing temperature increases or p H of the growth solution decreases. At the same time,...

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Bibliographic Details
Published in:Journal of applied physics 2010-10, Vol.108 (8), p.083716-083716-4
Main Authors: Zhang, Y. B., Goh, G. K. L., Ooi, K. F., Tripathy, S.
Format: Article
Language:English
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Summary:Epitaxial ZnO films were grown on single crystal spinel substrates at 90 ° C in water. Hall measurements showed that the n -type carrier concentration and conductivity of the ZnO films decreased as postgrowth annealing temperature increases or p H of the growth solution decreases. At the same time, x-ray photoelectron spectroscopy, room temperature and low-temperature photoluminescence, and secondary ion mass spectroscopy observations revealed that H incorporation was enhanced at a higher p H value but reduced with increasing annealing temperature. All these observations show that the unintentionally-incorporated hydrogen in solution grown ZnO acts as a shallow donor and enhances the n -type carrier density.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3500353