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Specific resistivity of delta-doped contacts in n-GaAs
Specific contact resistivities of nonalloyed Si delta-doped contacts to n-GaAs have been measured using six-terminal Kelvin test structures. The results indicate that multiple near-surface delta layers are needed to obtain ohmic contacts with resistivities of about 10−5 Ω cm2. Lower resistivity valu...
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Published in: | Journal of applied physics 1991-07, Vol.70 (1), p.514-516 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Specific contact resistivities of nonalloyed Si delta-doped contacts to n-GaAs have been measured using six-terminal Kelvin test structures. The results indicate that multiple near-surface delta layers are needed to obtain ohmic contacts with resistivities of about 10−5 Ω cm2. Lower resistivity values may be possible if the Si donor incorporation limit can be increased above 3×1019 cm−3 through improved growth conditions. Delta-layer effectiveness is degraded by process conditions that feature a Si3N4 overlayer. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.350264 |