Specific resistivity of delta-doped contacts in n-GaAs

Specific contact resistivities of nonalloyed Si delta-doped contacts to n-GaAs have been measured using six-terminal Kelvin test structures. The results indicate that multiple near-surface delta layers are needed to obtain ohmic contacts with resistivities of about 10−5 Ω cm2. Lower resistivity valu...

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Published in:Journal of applied physics 1991-07, Vol.70 (1), p.514-516
Main Authors: MARCY, D. L, MABY, E. W, NEWMAN, P. G, KHANNA, R
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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description Specific contact resistivities of nonalloyed Si delta-doped contacts to n-GaAs have been measured using six-terminal Kelvin test structures. The results indicate that multiple near-surface delta layers are needed to obtain ohmic contacts with resistivities of about 10−5 Ω cm2. Lower resistivity values may be possible if the Si donor incorporation limit can be increased above 3×1019 cm−3 through improved growth conditions. Delta-layer effectiveness is degraded by process conditions that feature a Si3N4 overlayer.
doi_str_mv 10.1063/1.350264
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
title Specific resistivity of delta-doped contacts in n-GaAs
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