Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes

In order to verify the actual effect of an exponential-doping structure on cathode performance, an exponential-doping structure has been applied to the preparation of the transmission-mode GaAs photocathode via molecular beam epitaxy technique. Compared with the uniform-doping photocathode, the acti...

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Bibliographic Details
Published in:Journal of applied physics 2010-11, Vol.108 (9)
Main Authors: Zhang, Yijun, Niu, Jun, Zhao, Jing, Zou, Jijun, Chang, Benkang, Shi, Feng, Cheng, Hongchang
Format: Article
Language:English
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Summary:In order to verify the actual effect of an exponential-doping structure on cathode performance, an exponential-doping structure has been applied to the preparation of the transmission-mode GaAs photocathode via molecular beam epitaxy technique. Compared with the uniform-doping photocathode, the activation and spectral response results show that the exponential-doping photocathode can achieve a higher photoemission capability. In addition, based on the revised uniform-doping and exponential-doping transmission-mode quantum yield equations, the cathode performance parameters such as electron average transport length and electron escape probability of the exponential-doping photocathode are obtained, which are greater than those of the uniform-doping one. The improvement in the cathode performance is attributed to the built-in electric field arising from this special doping structure, which effectively increases the electron transport efficiency and escape probability.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3504193