Spin transport in germanium at room temperature

Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent conductance at the Ni/Ge Schottky interface. We demonstrate electron spin...

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Bibliographic Details
Published in:Applied physics letters 2010-10, Vol.97 (16), p.162104-162104-3
Main Authors: Shen, C., Trypiniotis, T., Lee, K. Y., Holmes, S. N., Mansell, R., Husain, M., Shah, V., Li, X. V., Kurebayashi, H., Farrer, I., de Groot, C. H., Leadley, D. R., Bell, G., Parker, E. H. C., Whall, T., Ritchie, D. A., Barnes, C. H. W.
Format: Article
Language:English
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Summary:Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent conductance at the Ni/Ge Schottky interface. We demonstrate electron spin transport and electrical extraction from the Ge layer at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3505337