Ultrafast electrical charging and discharging of a single InGaAs quantum dot

We report on ultrafast control of the charge state of a single InGaAs quantum dot in a charge-tunable p-i-n diode structure. Focused ion beam etching is employed to decrease the capacitance of the device to enable radio frequency operation. A time-resolved photoluminescence technique is demonstrated...

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Bibliographic Details
Published in:Applied physics letters 2010-10, Vol.97 (17)
Main Authors: Nannen, J., Kümmell, T., Bartsch, M., Brunner, K., Bacher, G.
Format: Article
Language:English
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Summary:We report on ultrafast control of the charge state of a single InGaAs quantum dot in a charge-tunable p-i-n diode structure. Focused ion beam etching is employed to decrease the capacitance of the device to enable radio frequency operation. A time-resolved photoluminescence technique is demonstrated that allows monitoring the charge state with a time-resolution which is limited only by the radiative lifetime of the charged and neutral exciton, respectively. Experimental data show that the charge state can be manipulated on time scales shorter than the radiative lifetime of approximately 1.4 ns.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3505358