On the preparation and characterization of high-quality GaAs single quantum wells

A regime for growing high-quality GaAs/AlGaAs single-quantum-well structures by molecular-beam epitaxy with interruption only at the AlGaAs-on-GaAs heterointerface is reported. For 15- and 20-nm-wide wells the luminescence linewidth is found to be 0.44 and 0.29 meV, respectively. The data are among...

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Bibliographic Details
Published in:Journal of applied physics 1992-05, Vol.71 (10), p.5263-5265
Main Authors: HEY, R, HÖRICKE, M, FREY, A, EGOROV, V, KRISPIN, P, JUNGK, G
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:A regime for growing high-quality GaAs/AlGaAs single-quantum-well structures by molecular-beam epitaxy with interruption only at the AlGaAs-on-GaAs heterointerface is reported. For 15- and 20-nm-wide wells the luminescence linewidth is found to be 0.44 and 0.29 meV, respectively. The data are among the lowest values reported to date. Photoluminescence line splitting due to the formation of extended growth islands was not observed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.350588