Quantitative determination of the recombining activities of 60° and screw dislocations in float zone and Czochralski-grown silicon

We have characterized quantitatively the recombining activities of 60° and screw dislocations by their recombination velocities. This parameter was derived from the diffusion length determined by using the surface photovoltage method. Dislocations were introduced in initially perfect float zone and...

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Bibliographic Details
Published in:Journal of applied physics 1992-02, Vol.71 (3), p.1284-1289
Main Authors: MARIANI, J. L, PICHAUD, B, MINARI, F, MARTINUZZI, S
Format: Article
Language:English
Subjects:
Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Physics
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Summary:We have characterized quantitatively the recombining activities of 60° and screw dislocations by their recombination velocities. This parameter was derived from the diffusion length determined by using the surface photovoltage method. Dislocations were introduced in initially perfect float zone and Czochralski-grown crystals, at different temperatures. The results show that 60° dislocations are much more active than screws, and that the activity increases markedly with oxygen content of the material and with the temperature at which dislocations were introduced.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.351245