New cubic Cd1−xMnxS epilayers grown on GaAs (100) substrates by hot-wall epitaxy

The new cubic Cd1−xMnxS/GaAs(100) epilayers were grown by hot-wall epitaxy, and their structural and optical properties were investigated by x-ray diffraction (XRD) and photoluminescence (PL). The cubic structure spectra of the Cd1−xMnxS epilayers were only observed in the Mn composition range of 0....

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Bibliographic Details
Published in:Journal of applied physics 2010-12, Vol.108 (11)
Main Authors: Koo, T. K., O, Byungsung, Yu, Y.-M., Kim, D.-J., Kim, C.-S., Choi, Y. D., Lee, J. W., Yoon, M.-Y., Yu, P. Y., Kang, T. W.
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Language:English
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Summary:The new cubic Cd1−xMnxS/GaAs(100) epilayers were grown by hot-wall epitaxy, and their structural and optical properties were investigated by x-ray diffraction (XRD) and photoluminescence (PL). The cubic structure spectra of the Cd1−xMnxS epilayers were only observed in the Mn composition range of 0.000≤x≤0.050 from the XRD spectra and the x-ray ϕ-scan curves. The lattice constants of the Cd1−xMnxS epilayers decreased linearly with increasing Mn composition and were consistent with Vegard’s law. The Cd1−xMnxS epilayers from x-ray reciprocal space mapping were found to be in a partially biaxial compressive strain state. In the cubic Cd1−xMnxS epilayers, only yellow emission PL peaks at around 2.0 eV without other peaks such as the appreciable near-edge emission peak and self-activated peak were observed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3514550