Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

Impacts of point defects and impurities on the carrier recombination dynamics in AlN are revealed by time-resolved spectroscopy and positron annihilation measurements. Intrinsically short low-temperature excitonic radiative lifetime ( τ R ∼ 10   ps ) was elongated with the increase in Al-vacancy con...

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Bibliographic Details
Published in:Applied physics letters 2010-11, Vol.97 (20), p.201904-201904-3
Main Authors: Chichibu, S. F., Onuma, T., Hazu, K., Uedono, A.
Format: Article
Language:English
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Summary:Impacts of point defects and impurities on the carrier recombination dynamics in AlN are revealed by time-resolved spectroscopy and positron annihilation measurements. Intrinsically short low-temperature excitonic radiative lifetime ( τ R ∼ 10   ps ) was elongated with the increase in Al-vacancy concentration up to 530 ps, irrespective of threading dislocation density. A continuous decrease in τ R with temperature rise up to 200 K for heavily doped samples revealed the carrier release from the band-tail formed due to impurities and point defects. Because room-temperature nonradiative lifetime was equally short for all samples, high temperature growth with appropriate defect management is necessary in extracting radiative nature of AlN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3517484