A low-noise, single-photon avalanche diode in standard 0.13   μ m complementary metal-oxide-semiconductor process

We present the design and characterization of a single-photon avalanche diode (SPAD) fabricated with a standard 0.13   μ m complementary metal-oxide-semiconductor process. We have developed a figure of merit for SPADs when these detectors are employed in high frame-rate fluorescent lifetime imaging...

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Bibliographic Details
Published in:Applied physics letters 2010-11, Vol.97 (21), p.211111-211111-3
Main Authors: Field, Ryan M., Lary, Jenifer, Cohn, John, Paninski, Liam, Shepard, Kenneth L.
Format: Article
Language:English
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Summary:We present the design and characterization of a single-photon avalanche diode (SPAD) fabricated with a standard 0.13   μ m complementary metal-oxide-semiconductor process. We have developed a figure of merit for SPADs when these detectors are employed in high frame-rate fluorescent lifetime imaging microscopy, which allows us to specify an optimal bias point for the diode and compare our diode with other published devices. At its optimum bias point at room temperature, our SPAD achieves a photon detection probability of 29% while exhibiting a dark count rate of only 231 Hz and an impulse response of 198 ps.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3518473