The electronic structure of β-Ga2O3

β -Ga 2 O 3 has the widest energy gap of the transparent conducting oxides. The interest in its electronic properties has recently increased because of its applications in various optoelectronic devices, semiconductor lasers, and ultrasensitive gas detecting systems. In contrast, information on the...

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Bibliographic Details
Published in:Applied physics letters 2010-11, Vol.97 (21)
Main Authors: Mohamed, M., Janowitz, C., Unger, I., Manzke, R., Galazka, Z., Uecker, R., Fornari, R., Weber, J. R., Varley, J. B., Van de Walle, C. G.
Format: Article
Language:English
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Summary:β -Ga 2 O 3 has the widest energy gap of the transparent conducting oxides. The interest in its electronic properties has recently increased because of its applications in various optoelectronic devices, semiconductor lasers, and ultrasensitive gas detecting systems. In contrast, information on the electronic structure of β-Ga2O3 is very scarce. Here, we present the experimental valence-band structure of β-Ga2O3 single crystals determined by high-resolution angle-resolved photoelectron spectroscopy utilizing synchrotron radiation. We find good matching of the experimental band structure with the advanced density functional theory calculations employing hybrid functionals and projector augmented wave potentials.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3521255