Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

Fundamental oscillations up to 1.04 THz were achieved in resonant tunneling diodes at room temperature. A graded emitter and thin barriers were introduced in GaInAs/AlAs double-barrier resonant tunneling diodes for reductions of the transit time in the collector depletion region and the resonant tun...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2010-12, Vol.97 (24)
Main Authors: Suzuki, Safumi, Asada, Masahiro, Teranishi, Atsushi, Sugiyama, Hiroki, Yokoyama, Haruki
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Fundamental oscillations up to 1.04 THz were achieved in resonant tunneling diodes at room temperature. A graded emitter and thin barriers were introduced in GaInAs/AlAs double-barrier resonant tunneling diodes for reductions of the transit time in the collector depletion region and the resonant tunneling time, respectively. Output powers were 7 μW at 1.04 THz and around 10 μW in 0.9–1 THz region. A change in oscillation frequency of about 4% with bias voltage was also obtained.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3525834