Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

In this letter, we study the influence of the Pt top-electrode thickness and of the chamber atmosphere during cell operation on the resistive switching of TiN\HfO2\Pt cells. The oxygen permeability of the Pt electrode directly in contact with the atmosphere significantly affects the resistive switch...

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Bibliographic Details
Published in:Applied physics letters 2010-12, Vol.97 (24)
Main Authors: Goux, L., Czarnecki, P., Chen, Y. Y., Pantisano, L., Wang, X. P., Degraeve, R., Govoreanu, B., Jurczak, M., Wouters, D. J., Altimime, L.
Format: Article
Language:English
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Summary:In this letter, we study the influence of the Pt top-electrode thickness and of the chamber atmosphere during cell operation on the resistive switching of TiN\HfO2\Pt cells. The oxygen permeability of the Pt electrode directly in contact with the atmosphere significantly affects the resistive switching and the resistance states of the cell. The results provide strong experimental indications that the electroforming operation leads to oxygen-vacancy formation and that the subsequent reset operation relies on the available oxygen species in the filament neighborhood. Significant implications with respect to endurance and retention assessment of resistive-switching memory devices are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3527086