p-Type CdTe epilayers grown by hot-wall-beam epitaxy

Highly conducting p-type CdTe films were grown by photoassisted hot-wall-beam epitaxy using Li3N as a dopant source. Doping levels can be controlled from p=4×1016 to 2×1018 cm−3, as determined by Van der Pauw measurements. The hall mobility ranges from 30 to 100 cm2/V s, depending on the hole concen...

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Bibliographic Details
Published in:Journal of applied physics 1993-04, Vol.73 (8), p.4061-4063
Main Authors: PAULI, H, HINGERL, K, ABRAMOF, E, SITTER, H, ZAJICEK, H, LISCHKA, K
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Highly conducting p-type CdTe films were grown by photoassisted hot-wall-beam epitaxy using Li3N as a dopant source. Doping levels can be controlled from p=4×1016 to 2×1018 cm−3, as determined by Van der Pauw measurements. The hall mobility ranges from 30 to 100 cm2/V s, depending on the hole concentration. Photoassisted growth enhances the incorporation of dopants by one order of magnitude and decreases the growth rate.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.352854