Low of rf-loss, bondable ohmic contacts on Tl2Ba2CaCu2O8-δ for microwave devices

We present two processes for the fabrication of bondable, low-loss ohmic contacts to high-temperature superconductor thin-film devices. Contact resistances at both high and low frequencies are comparable—between 5.0×10−7 and 2.0×10−5 Ω cm2 at 77 K. We demonstrate that losses at low frequency correla...

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Bibliographic Details
Published in:Journal of applied physics 1993-03, Vol.73 (6), p.3092-3095
Main Authors: SCHAREN, M. J, SKOGLUND, D. L, FORSE, R. J, NILSSON, B. J. L, HAMMOND, R. B, OLSON, W. L
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We present two processes for the fabrication of bondable, low-loss ohmic contacts to high-temperature superconductor thin-film devices. Contact resistances at both high and low frequencies are comparable—between 5.0×10−7 and 2.0×10−5 Ω cm2 at 77 K. We demonstrate that losses at low frequency correlate with losses up to 10 GHz. Destructive bond pull strengths for 25-μm-diam, thermosonically attached gold wire average between 5.0 and 8.0 g force, exceeding the industry standard of 3.0 g force. Preliminary results also show that contact resistance as low as 1.7×10−8 Ω cm2 are attainable with annealing. These processes satisfy a pressing need for fabrication of reliable, low-loss ohmic contacts required for the development and production of high-performance passive microwave devices based on high-Tc superconducting thin-film materials.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.352994