Luminescence due to lattice-mismatch defects in ZnTe layers grown by metalorganic vapor phase epitaxy

Two sharp and intense emission bands with the maxima of 2.185 and 2.150 eV and a weak phonon coupling were investigated in the heteroepitaxial ZnTe layers. The study of the ZnTe layers grown on different substrates with thicknesses of 0.5–3.2 μm has shown that this luminescence is produced in the in...

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Bibliographic Details
Published in:Journal of applied physics 1993-03, Vol.73 (5), p.2581-2583
Main Authors: NAUMOV, A, WOLF, K, REISINGER, T, STANZL, H, GEBHARDT, W
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Ii-vi semiconductors
Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, epr, nmr, etc.)
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Structure of solids and liquids
crystallography
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Summary:Two sharp and intense emission bands with the maxima of 2.185 and 2.150 eV and a weak phonon coupling were investigated in the heteroepitaxial ZnTe layers. The study of the ZnTe layers grown on different substrates with thicknesses of 0.5–3.2 μm has shown that this luminescence is produced in the interface region that contains a high density of structural defects. The temperature dependence of these bands reveals the excitonic character of the recombination. We propose that the observed bands originate from the recombination of excitons localized at structural defects such as dislocations and associated defects.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.353071