Fabrication and characterization of thin, self-supporting germanium single crystals

Thin Ge single crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxial Ge films grown by atmospheric pressure chemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Ge film near the interf...

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Bibliographic Details
Published in:Journal of applied physics 1993-03, Vol.73 (5), p.2486-2488
Main Authors: GRANT, M. W, LYMAN, P. F, HOOGENRAAD, J. H, CARLSWARD, B. S, ARMS, D. A, SEIBERLING, L. E, NAMAVAR, F
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Thin Ge single crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxial Ge films grown by atmospheric pressure chemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Ge film near the interface that contains misfit dislocations associated with heteroepitaxial growth and relaxation of the Ge films. The resulting Ge films are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.353108