Microscopic study of cluster formation in the Ga on GaAs(001) system

A microscopic study of the cluster morphology for the system Ga on GaAs(001) is presented. Clusters are shown to have significant volume fractions below the surface level of the surrounding substrate. A thermodynamic model qualitatively describes this phenomena based on a comparison between (a) arse...

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Bibliographic Details
Published in:Journal of applied physics 1993-05, Vol.73 (10), p.4937-4941
Main Authors: LOWES, T. D, ZINKE-ALLMANG, M
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Vapor phase epitaxy
growth from vapor phase
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Summary:A microscopic study of the cluster morphology for the system Ga on GaAs(001) is presented. Clusters are shown to have significant volume fractions below the surface level of the surrounding substrate. A thermodynamic model qualitatively describes this phenomena based on a comparison between (a) arsenic desorption from the GaAs surface, limited either by bulk diffusion of arsenic or surface diffusion of gallium to the nearest cluster and (b) dissolution of GaAs in Ga clusters with subsequent diffusion of the As to the cluster surface and desorption. A quantitative rate prediction based on this model is in an order of magnitude agreement with the experimental data.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.353812