Fe 3 O 4 / ZnO : A high-quality magnetic oxide-semiconductor heterostructure by reactive deposition

We demonstrate the epitaxial growth of Fe 3 O 4 films on ZnO by a simple reactive deposition procedure using molecular oxygen as an oxidizing agent. X-ray photoelectron spectroscopy results evidence that the iron-oxide surface is nearly stoichiometric magnetite. X-ray diffraction results indicate mo...

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Bibliographic Details
Published in:Applied physics letters 2011-01, Vol.98 (1), p.012512-012512-3
Main Authors: Paul, M., Kufer, D., Müller, A., Brück, S., Goering, E., Kamp, M., Verbeeck, J., Tian, H., Van Tendeloo, G., Ingle, N. J. C., Sing, M., Claessen, R.
Format: Article
Language:English
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Summary:We demonstrate the epitaxial growth of Fe 3 O 4 films on ZnO by a simple reactive deposition procedure using molecular oxygen as an oxidizing agent. X-ray photoelectron spectroscopy results evidence that the iron-oxide surface is nearly stoichiometric magnetite. X-ray diffraction results indicate monocrystalline epitaxy and almost complete structural relaxation. Scanning transmission electron micrographs reveal that the microstructure consists of domains which are separated by antiphase boundaries or twin boundaries. The magnetite films show rather slow magnetization behavior in comparison with bulk crystals probably due to reduced magnetization at antiphase boundaries in small applied fields.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3540653