Low temperature operation of Ge-Ag ohmic contacts to a high mobility two dimensional electron gas

Ge-Ag ohmic contacts with good dimensional control to a two dimensional electron gas operating at low temperatures are demonstrated. At 4.2 K, the specific contact resistance lies in the range 2–5 Ω mm for anneals between 520 and 560 °C. The surface morphology is smooth, and the edge definition is o...

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Bibliographic Details
Published in:Journal of applied physics 1993-11, Vol.74 (9), p.5883-5885
Main Authors: CHABASSEUR-MOLYNEUX, V, FROST, J. E. F, TRIBBLE, M. J, GRIMSHAW, M. P, RITCHIE, D. A, CHURCHILL, A. C, JONES, G. A. C, PEPPER, M, BURROUGHES, J. H
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Contact resistance, contact potential
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Metal-nonmetal contacts
Physics
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Summary:Ge-Ag ohmic contacts with good dimensional control to a two dimensional electron gas operating at low temperatures are demonstrated. At 4.2 K, the specific contact resistance lies in the range 2–5 Ω mm for anneals between 520 and 560 °C. The surface morphology is smooth, and the edge definition is of the order of 100 nm. Secondary ion mass spectroscopy analysis indicates that Ge diffusion is limited to within 2000 Å of the surface for a concentration of 1017 cm−3 in samples annealed at 540 °C and below.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.354163