Current flow mechanisms in GaAs planar-doped-barrier diodes with high built-in fields

The existing models of the current flow across planar-doped-barrier (PDB) diodes are based on thermionic emission over the triangular barriers and have successfully predicted the characteristics of diodes with low barriers. However, experimental measurements on planar-doped-barrier (PDB) electron em...

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Bibliographic Details
Published in:Journal of applied physics 1993-11, Vol.74 (9), p.5569-5574
Main Authors: WEI-NAN JIANG, MISHRA, U. K
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The existing models of the current flow across planar-doped-barrier (PDB) diodes are based on thermionic emission over the triangular barriers and have successfully predicted the characteristics of diodes with low barriers. However, experimental measurements on planar-doped-barrier (PDB) electron emitters suggest that tunneling can be the dominant transport mechanism across PDB structures with high built-in fields. In this work, we propose a model that takes into account the quantum mechanical effects of the scattering across the barrier and the tunneling through the energy band gap. Good agreement between the theory and experiments has been obtained.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.354217