Current flow mechanisms in GaAs planar-doped-barrier diodes with high built-in fields

The existing models of the current flow across planar-doped-barrier (PDB) diodes are based on thermionic emission over the triangular barriers and have successfully predicted the characteristics of diodes with low barriers. However, experimental measurements on planar-doped-barrier (PDB) electron em...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1993-11, Vol.74 (9), p.5569-5574
Main Authors: WEI-NAN JIANG, MISHRA, U. K
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c256t-43fdadd7e512d85353bad531b96aaf792be5e8b4a9f54e83aefc2526adaa85f93
cites cdi_FETCH-LOGICAL-c256t-43fdadd7e512d85353bad531b96aaf792be5e8b4a9f54e83aefc2526adaa85f93
container_end_page 5574
container_issue 9
container_start_page 5569
container_title Journal of applied physics
container_volume 74
creator WEI-NAN JIANG
MISHRA, U. K
description The existing models of the current flow across planar-doped-barrier (PDB) diodes are based on thermionic emission over the triangular barriers and have successfully predicted the characteristics of diodes with low barriers. However, experimental measurements on planar-doped-barrier (PDB) electron emitters suggest that tunneling can be the dominant transport mechanism across PDB structures with high built-in fields. In this work, we propose a model that takes into account the quantum mechanical effects of the scattering across the barrier and the tunneling through the energy band gap. Good agreement between the theory and experiments has been obtained.
doi_str_mv 10.1063/1.354217
format article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_354217</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4100462</sourcerecordid><originalsourceid>FETCH-LOGICAL-c256t-43fdadd7e512d85353bad531b96aaf792be5e8b4a9f54e83aefc2526adaa85f93</originalsourceid><addsrcrecordid>eNo9kL1OwzAURi0EEqUg8QgeGFhcfO04sccqgoJUiYXO0U1sE6P8yU5V8fYUBTF9yznfcAi5B74Bnssn2EiVCSguyAq4NqxQil-SFecCmDaFuSY3KX1xDqClWZFDeYzRDTP13XiivWtaHELqEw0D3eE20anDASOz4-QsqzHG4CK1YbQu0VOYW9qGz5bWx9DN7Oz44DqbbsmVxy65u79dk8PL80f5yvbvu7dyu2eNUPnMMuktWls4BcJqJZWs0SoJtckRfWFE7ZTTdYbGq8xpic6fRZGjRdTKG7kmj8tvE8eUovPVFEOP8bsCXv3mqKBacpzRhwWdMDXY-YhDE9I_nwHnWS7kD-HbX6I</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Current flow mechanisms in GaAs planar-doped-barrier diodes with high built-in fields</title><source>AIP Digital Archive</source><creator>WEI-NAN JIANG ; MISHRA, U. K</creator><creatorcontrib>WEI-NAN JIANG ; MISHRA, U. K</creatorcontrib><description>The existing models of the current flow across planar-doped-barrier (PDB) diodes are based on thermionic emission over the triangular barriers and have successfully predicted the characteristics of diodes with low barriers. However, experimental measurements on planar-doped-barrier (PDB) electron emitters suggest that tunneling can be the dominant transport mechanism across PDB structures with high built-in fields. In this work, we propose a model that takes into account the quantum mechanical effects of the scattering across the barrier and the tunneling through the energy band gap. Good agreement between the theory and experiments has been obtained.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.354217</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Applied sciences ; Diodes ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of applied physics, 1993-11, Vol.74 (9), p.5569-5574</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c256t-43fdadd7e512d85353bad531b96aaf792be5e8b4a9f54e83aefc2526adaa85f93</citedby><cites>FETCH-LOGICAL-c256t-43fdadd7e512d85353bad531b96aaf792be5e8b4a9f54e83aefc2526adaa85f93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=4100462$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>WEI-NAN JIANG</creatorcontrib><creatorcontrib>MISHRA, U. K</creatorcontrib><title>Current flow mechanisms in GaAs planar-doped-barrier diodes with high built-in fields</title><title>Journal of applied physics</title><description>The existing models of the current flow across planar-doped-barrier (PDB) diodes are based on thermionic emission over the triangular barriers and have successfully predicted the characteristics of diodes with low barriers. However, experimental measurements on planar-doped-barrier (PDB) electron emitters suggest that tunneling can be the dominant transport mechanism across PDB structures with high built-in fields. In this work, we propose a model that takes into account the quantum mechanical effects of the scattering across the barrier and the tunneling through the energy band gap. Good agreement between the theory and experiments has been obtained.</description><subject>Applied sciences</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kL1OwzAURi0EEqUg8QgeGFhcfO04sccqgoJUiYXO0U1sE6P8yU5V8fYUBTF9yznfcAi5B74Bnssn2EiVCSguyAq4NqxQil-SFecCmDaFuSY3KX1xDqClWZFDeYzRDTP13XiivWtaHELqEw0D3eE20anDASOz4-QsqzHG4CK1YbQu0VOYW9qGz5bWx9DN7Oz44DqbbsmVxy65u79dk8PL80f5yvbvu7dyu2eNUPnMMuktWls4BcJqJZWs0SoJtckRfWFE7ZTTdYbGq8xpic6fRZGjRdTKG7kmj8tvE8eUovPVFEOP8bsCXv3mqKBacpzRhwWdMDXY-YhDE9I_nwHnWS7kD-HbX6I</recordid><startdate>19931101</startdate><enddate>19931101</enddate><creator>WEI-NAN JIANG</creator><creator>MISHRA, U. K</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19931101</creationdate><title>Current flow mechanisms in GaAs planar-doped-barrier diodes with high built-in fields</title><author>WEI-NAN JIANG ; MISHRA, U. K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c256t-43fdadd7e512d85353bad531b96aaf792be5e8b4a9f54e83aefc2526adaa85f93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Applied sciences</topic><topic>Diodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WEI-NAN JIANG</creatorcontrib><creatorcontrib>MISHRA, U. K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WEI-NAN JIANG</au><au>MISHRA, U. K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Current flow mechanisms in GaAs planar-doped-barrier diodes with high built-in fields</atitle><jtitle>Journal of applied physics</jtitle><date>1993-11-01</date><risdate>1993</risdate><volume>74</volume><issue>9</issue><spage>5569</spage><epage>5574</epage><pages>5569-5574</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The existing models of the current flow across planar-doped-barrier (PDB) diodes are based on thermionic emission over the triangular barriers and have successfully predicted the characteristics of diodes with low barriers. However, experimental measurements on planar-doped-barrier (PDB) electron emitters suggest that tunneling can be the dominant transport mechanism across PDB structures with high built-in fields. In this work, we propose a model that takes into account the quantum mechanical effects of the scattering across the barrier and the tunneling through the energy band gap. Good agreement between the theory and experiments has been obtained.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.354217</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 1993-11, Vol.74 (9), p.5569-5574
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_354217
source AIP Digital Archive
subjects Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Current flow mechanisms in GaAs planar-doped-barrier diodes with high built-in fields
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T12%3A15%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Current%20flow%20mechanisms%20in%20GaAs%20planar-doped-barrier%20diodes%20with%20high%20built-in%20fields&rft.jtitle=Journal%20of%20applied%20physics&rft.au=WEI-NAN%20JIANG&rft.date=1993-11-01&rft.volume=74&rft.issue=9&rft.spage=5569&rft.epage=5574&rft.pages=5569-5574&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.354217&rft_dat=%3Cpascalfrancis_cross%3E4100462%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c256t-43fdadd7e512d85353bad531b96aaf792be5e8b4a9f54e83aefc2526adaa85f93%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true