Growth of multilayers of Bi2Se3/ZnSe: Heteroepitaxial interface formation and strain

Multilayers of Bi2Se3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi2Se3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi2Se3 showed the three-dimensional growth front. Therefore, the two complementary int...

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Bibliographic Details
Published in:Applied physics letters 2011-01, Vol.98 (4)
Main Authors: Li, H. D., Wang, Z. Y., Guo, X., Wong, Tai Lun, Wang, Ning, Xie, M. H.
Format: Article
Language:English
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Summary:Multilayers of Bi2Se3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi2Se3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi2Se3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi2Se3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi2Se3, which could be attributed to the specific growth modes and the properties of Bi2Se3 and ZnSe surfaces.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3548865