The structural homogeneity of boron carbide thin films fabricated using plasma-enhanced chemical vapor deposition from B5H9+CH4

• Published in: Journal of applied physics 1993-12, Vol.74 (11), p.6919-6924
• Main Authors: SUNWOO LEE, MAZUROWSKI, J, DOWBEN, P. A, O'BRIEN, W. L, DONG, Q. Y, JIA, J. J, CALLCOTT, T. A, YEXIN TAN, MIYANO, K. E, EDERER, D. L, MUELLER, D. R
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other interactions of matter with particles and radiation; Physics; Surface and interface electron states; Surface states, band structure, electron density of states; Vapor phase epitaxy; growth from vapor phase; X-ray emission spectra and fluorescence; X-ray emission threshold and fluorescence
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.355066

Boron carbide thin films of several B/C ratios have been deposited on Si(111) using plasma-enhanced chemical vapor deposition from nido-pentaborane(9) (B5H9) and methane (CH4). X-ray diffraction studies of boron carbide thin films on Si(111) exhibited characteristic microcrystalline diffraction lines. Soft x-ray emission spectroscopy was used to verify that the local electronic structure and composition of each sample corresponded to a homogeneous solid solution boron carbide phase.