Trap filling measurements to determine the crossover point of Fermi level and midgap level in GaAs by constant capacitance technique

Trap filling measurements on the midgap level in GaAs are carried out under constant capacitance conditions in the emission process. The transient voltage after application of a filling pulse is measured with varying capture time. A method to obtain the distance λ1 from the depletion edge to the cro...

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Bibliographic Details
Published in:Journal of applied physics 1993-11, Vol.74 (10), p.6422-6424
Main Authors: TOMOKAGE, H, FURUTA, H, MIYAMOTO, T
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface double layers, schottky barriers, and work functions
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Summary:Trap filling measurements on the midgap level in GaAs are carried out under constant capacitance conditions in the emission process. The transient voltage after application of a filling pulse is measured with varying capture time. A method to obtain the distance λ1 from the depletion edge to the crossover point of the midgap level and the quasi-Fermi level is proposed for the case of high trap concentration. Fitting the calculated λ1 to the experimental results enables estimation of the capture cross section of electron in the midgap level.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.355120