Tunable electronic structures of graphene/boron nitride heterobilayers

Using first-principles calculations, we show that the band gap and electron effective mass (EEM) of graphene/boron nitride heterobilayers (C/BN HBLs) can be modulated effectively by tuning the interlayer spacing and stacking arrangement. The HBLs have smaller EEM than that of graphene bilayers (GBLs...

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Bibliographic Details
Published in:Applied physics letters 2011-02, Vol.98 (8), p.083103-083103-3
Main Authors: Fan, Yingcai, Zhao, Mingwen, Wang, Zhenhai, Zhang, Xuejuan, Zhang, Hongyu
Format: Article
Language:English
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Summary:Using first-principles calculations, we show that the band gap and electron effective mass (EEM) of graphene/boron nitride heterobilayers (C/BN HBLs) can be modulated effectively by tuning the interlayer spacing and stacking arrangement. The HBLs have smaller EEM than that of graphene bilayers (GBLs), and thus higher carrier mobility. For specific stacking patterns, the nearly linear band dispersion relation of graphene monolayer can be preserved in the HBLs accompanied by a small band-gap opening. The tunable band gap and high carrier mobility of these C/BN HBLs are promising for building high-performance nanodevices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3556640