Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

This letter investigates the impact of static and dynamic stress on threshold voltage (Vth) instability in ultrathin n-channel metal-oxide-semiconductor field-effect transistors with hafnium-based gate stacks. Experimental results indicate Vth shift under dynamic stress is more serious than that und...

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Bibliographic Details
Published in:Applied physics letters 2011-02, Vol.98 (9)
Main Authors: Dai, Chih-Hao, Chang, Ting-Chang, Chu, Ann-Kuo, Kuo, Yuan-Jui, Lo, Wen-Hung, Ho, Szu-Han, Chen, Ching-En, Shih, Jou-Miao, Chen, Hua-Mao, Dai, Bai-Shan, Xia, Guangrui, Cheng, Osbert, Huang, Cheng Tung
Format: Article
Language:English
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Summary:This letter investigates the impact of static and dynamic stress on threshold voltage (Vth) instability in ultrathin n-channel metal-oxide-semiconductor field-effect transistors with hafnium-based gate stacks. Experimental results indicate Vth shift under dynamic stress is more serious than that under static stress due to charge trapping within the high-k dielectric. Capacitance-voltage techniques demonstrated that electron trapping under dynamic stress was located in the high-k dielectric near the source/drain overlap region rather than throughout the overall dielectric layer. This implies in real circuit operation, the phenomenon of electrons trapped in high-k near the source/drain overlap is the main issue affecting Vth instability.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3560463