Raman investigation of light-emitting porous silicon layers: Estimate of characteristic crystallite dimensions

Light-emitting porous silicon layers prepared on two types of boron-doped p and p+-Si substrates were studied by Raman spectroscopy in a broad frequency range (0–1100 cm−1). Standard phonon confinement model supported by new results from low-frequency scattering permit us to estimate consistently th...

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Bibliographic Details
Published in:Journal of applied physics 1994-03, Vol.75 (6), p.3034-3039
Main Authors: Gregora, I., Champagnon, B., Halimaoui, A.
Format: Article
Language:English
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Summary:Light-emitting porous silicon layers prepared on two types of boron-doped p and p+-Si substrates were studied by Raman spectroscopy in a broad frequency range (0–1100 cm−1). Standard phonon confinement model supported by new results from low-frequency scattering permit us to estimate consistently the characteristic dimensions of nanometric crystallites in porous silicon, without invoking complex size distribution. A sizable fraction of a highly disordered (a-Si) phase in the p-type samples is detected, and there is no clear spectral evidence of other Si-based compounds.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.356149